The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Oct. 02, 2013
Sandisk Technologies Inc., Plano, TX (US);
Deepak Raghu, Milpitas, CA (US);
Gautam Dusija, Milpitas, CA (US);
Chris Avila, Saratoga, CA (US);
Yingda Dong, San Jose, CA (US);
Man Mui, Fremont, CA (US);
Pao-Ling Koh, Fremont, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Erasing memory cells in certain 3-D NAND charge-storage memory arrays is achieved by rapidly charging vertical conductors using Gate Induced Drain Leakage (GIDL) current generated in select transistors. When bit line voltage drops below its nominal value, select line voltage is controlled to maintain a constant voltage difference between bit line voltage and select line voltage thus maintaining a gate-drain voltage difference in select transistors that provides sufficient GIDL current for erase.