The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

May. 27, 2011
Applicants:

Roger Ziltener, Sursee, CH;

Roland Kern, Bülach, CH;

David Bremaud, Zürich, CH;

Björn Keller, Frauenfeld, CH;

Inventors:

Roger Ziltener, Sursee, CH;

Roland Kern, Bülach, CH;

David Bremaud, Zürich, CH;

Björn Keller, Frauenfeld, CH;

Assignee:

Flisom AG, Duebendorf, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0264 (2006.01); H01L 31/05 (2014.01); H01L 31/0296 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0392 (2013.01); H01L 31/0296 (2013.01); Y02E 10/541 (2013.01); H01L 31/0322 (2013.01); H01L 31/0749 (2013.01);
Abstract

A method to fabricate monolithically-integrated optoelectronic module apparatuses () comprising at least two series-interconnected optoelectronic components (). The method includes deposition and scribing on an insulating substrate or superstate () of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (), (b) semiconductive layer (), and (c) front-contact components (). Via holes () are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface () of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components () by connecting first front-contact components () to second back-contact electrodes ().


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