The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Oct. 13, 2010
Jing-yi Yan, Hsinchu County, TW;
Chu-yin Hung, Hsinchu, TW;
Hsiao-chiang Yao, Kaohsiung, TW;
Yen-yu Wu, Taichung, TW;
Yen-shih Huang, Hsinchu, TW;
Jing-Yi Yan, Hsinchu County, TW;
Chu-Yin Hung, Hsinchu, TW;
Hsiao-Chiang Yao, Kaohsiung, TW;
Yen-Yu Wu, Taichung, TW;
Yen-Shih Huang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.