The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Jan. 05, 2011
Applicants:

Yoshitaka Ozeki, Aichi, JP;

Yasuhito Kuwahara, Aichi, JP;

Shigetaka Toriyama, Kanagawa, JP;

Hiroyuki Ikeda, Tokyo, JP;

Inventors:

Yoshitaka Ozeki, Aichi, JP;

Yasuhito Kuwahara, Aichi, JP;

Shigetaka Toriyama, Kanagawa, JP;

Hiroyuki Ikeda, Tokyo, JP;

Assignee:

Japan Display West Inc., Chita-gun, Aichi-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/42384 (2013.01); H01L 29/78609 (2013.01); H01L 29/78645 (2013.01); G02F 1/13624 (2013.01); G02F 1/136286 (2013.01);
Abstract

A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overlapping with the channel region, wherein the channel region includes at least a portion of a channel width that is configured to at least one of continuously decrease and continuously increase in a lengthwise direction.


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