The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Dec. 27, 2013
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Kyung Do Kim, Seoul, KR;

Assignee:

SK Hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 29/423 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor device having a line-type active region and a method for manufacturing the same are disclosed. The semiconductor device includes an active region configured in a successive line type, at least one active gate having a first width and crossing the active region, and an isolation gate having a second width different from the first width and being formed between the active gates. The isolation gate's width and the active gate's width are different from each other to guarantee a large storage node contact region, resulting in increased device operation characteristics (write characteristics).


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