The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Aug. 03, 2012
Chao-hsing Chen, Hsinchu, TW;
Chien-fu Shen, Hsinchu, TW;
Schang-jing Hon, Hsinchu, TW;
Tsun-kai Ko, Hsinchu, TW;
Wei-yo Chen, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Chien-Fu Shen, Hsinchu, TW;
Schang-Jing Hon, Hsinchu, TW;
Tsun-Kai Ko, Hsinchu, TW;
Wei-Yo Chen, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.