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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8928004 B1

PDFFull Text
Date of Patent:
Jan. 06, 2015

Filed:

Nov. 20, 2013

Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same

Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Songbaek Choe, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Akira Inoue, Osaka, JP;

Atsushi Yamada, Osaka, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

William D Coleman

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/036 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 33/18 (2010.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); H01L 33/16 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); C30B 29/40 (2006.01); H01L 33/58 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); H01L 33/16 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H01L 21/0265 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); C30B 29/403 (2013.01); H01L 21/20 (2013.01); H01L 33/58 (2013.01); H01L 21/0262 (2013.01); H01L 21/02609 (2013.01); H01L 21/02642 (2013.01); H01L 33/32 (2013.01); H01L 33/12 (2013.01);
Abstract

A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.

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