The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Mar. 04, 2013
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting devicecomprises a support substrate, a GaN substrate, an n-type contact layer, a strain relaxation layer(n-type InGaN layer), a light emitting layer, a p-type clad layer, and a p-type contact layer. The GaN substratehas a thickness in a range of from 10 nm to 10 μm. The strain relaxation layer(n-type InGaN layer) has an In composition ratio X in a range of from larger than 0 to 3%.