The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Sep. 27, 2013
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Tzu-Chi Chou, Taichung, TW;
Kuo-Chuang Chiu, Hsinchu, TW;
Show-Ju Peng, Zhubei, TW;
Shan-Haw Chiou, Hsinchu, TW;
Yu-Tsz Shie, Hengshan Township, Hsinchu County, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/12 (2013.01);
Abstract
The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula:InGaMZnO,wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10˜6×10cm.