The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jan. 16, 2013
Ramgoss, Inc., Boston, MA (US);
Bunmi T. Adekore, Boston, MA (US);
James Fiorenza, Wilmington, MA (US);
RamGoss, Inc., Woburn, MA (US);
Abstract
A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an AlOor a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.