The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Sep. 03, 2010
Ken-ichi Nakayama, Yonezawa, JP;
Junji Kido, Yonezawa, JP;
Yong-jin Pu, Yonezawa, JP;
Fumito Suzuki, Yonezawa, JP;
Naomi Oguma, Chuo-ku, JP;
Naoki Hirata, Chuo-ku, JP;
Ken-ichi Nakayama, Yonezawa, JP;
Junji Kido, Yonezawa, JP;
Yong-Jin Pu, Yonezawa, JP;
Fumito Suzuki, Yonezawa, JP;
Naomi Oguma, Chuo-ku, JP;
Naoki Hirata, Chuo-ku, JP;
Dainichiseika Color & Chemicals Mfg. Co., Ltd., Chuo-ku, Tokyo, JP;
Other;
Abstract
A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.