The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 26, 2010
Masaki Ueno, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Masaki Ueno, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A group III nitride semiconductor optical devicehas a group III nitride semiconductor substratehaving a main surfaceforming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layerof a quantum-well structure, disposed on the main surfaceof the group III nitride semiconductor substrate, including a well layermade of a group III nitride semiconductor and a plurality of barrier layersmade of a group III nitride semiconductor. The main surfaceexhibits semipolarity. The active layerhas an oxygen content of at least 1×10cmbut not exceeding 8×10cm. The plurality of barrier layerscontain an n-type impurity other than oxygen by at least 1×10cmbut not exceeding 1×10cmin an upper near-interface areain contact with a lower interfaceSd of the well layeron the group III nitride semiconductor substrate side.