The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jan. 28, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Seong Jae Kim, Seoul, KR;
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 29/22 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01);
Abstract
A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one InGaN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one InGaN layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.
Quick Actions:
Kim, Seong. (2015). Gallium nitride based light emitting diode (U.S. Patent No. 8927960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8927960
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile