The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Feb. 03, 2011
Applicants:

Tomoyuki Seino, Hitachi, JP;

Yuichiro Ueno, Hitachi, JP;

Takafumi Ishitsu, Hitachi, JP;

Inventors:

Tomoyuki Seino, Hitachi, JP;

Yuichiro Ueno, Hitachi, JP;

Takafumi Ishitsu, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
G01T 1/247 (2013.01);
Abstract

The purpose of the present invention is to improve energy resolving power and prevent energy resolving power from deteriorating when a thick semiconductor detection element with a wide energy range is used, in a radiation measuring device using a semiconductor detector and a nuclear medicine diagnostic device. With the present invention, the purpose is achieved by pulsed wave value correction employing the difference of (Hs−Hf) between the pulsed wave height value Hs obtained from the slow speed shaping circuit, and the pulsed wave height value Hf obtained from the fast speed shaping circuit and normalized with respect to Hs. An even more desirable result may be obtained by employing either (Hs−Hf)/Hf or exp(k(Hs−Hf)/Hf), wherein k is a coefficient to be optimized, said optimization being dependent on the measurement assembly.


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