The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
May. 24, 2012
Dae Ho Kim, Daegu, KR;
Bong-kyun Kim, Hwaseong-si, KR;
Yong-hwan Ryu, Yongin-si, KR;
Hong Sick Park, Suwon-si, KR;
Wang Woo Lee, Suwon-si, KR;
Shin IL Choi, Hwaseong-si, KR;
Dae Ho Kim, Daegu, KR;
Bong-Kyun Kim, Hwaseong-si, KR;
Yong-Hwan Ryu, Yongin-si, KR;
Hong Sick Park, Suwon-si, KR;
Wang Woo Lee, Suwon-si, KR;
Shin Il Choi, Hwaseong-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.