The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jun. 18, 2012
Emre Alptekin, Wappingers Falls, NY (US);
Nathaniel Berliner, Albany, NY (US);
Christian Lavoie, Ossining, NY (US);
Kam-leung Lee, Yorktown Heights, NY (US);
Ahmet Serkan Ozcan, Pleasantville, NY (US);
Emre Alptekin, Wappingers Falls, NY (US);
Nathaniel Berliner, Albany, NY (US);
Christian Lavoie, Ossining, NY (US);
Kam-Leung Lee, Yorktown Heights, NY (US);
Ahmet Serkan Ozcan, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide, a width of the silicide and the contact trench are substantially equal; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° C. in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.