The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Apr. 12, 2012
Applicants:
Tatsuo Shimizu, Tokyo, JP;
Masato Koyama, Miura-Gun, JP;
Inventors:
Tatsuo Shimizu, Tokyo, JP;
Masato Koyama, Miura-Gun, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 29/51 (2006.01); H01L 21/318 (2006.01); H01L 49/02 (2006.01); H01L 21/28 (2006.01); H01L 21/316 (2006.01); H01L 21/3115 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 29/518 (2013.01); H01L 29/517 (2013.01); H01L 21/318 (2013.01); H01L 28/40 (2013.01); H01L 29/66553 (2013.01); H01L 21/316 (2013.01); H01L 21/31155 (2013.01); H01L 21/28194 (2013.01); H01L 29/66545 (2013.01); H01L 21/28273 (2013.01);
Abstract
It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×10cm.