The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

May. 12, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Majeed A. Foad, Sunnyvale, CA (US);

Manoj Vellaikal, Sunnyvale, CA (US);

Kartik Santhanam, Milpitas, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/30 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01J 37/32357 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0223 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/2236 (2013.01); H01L 21/31662 (2013.01);
Abstract

A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.


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