The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jun. 16, 2011
Ulrich Jager, Freiburg, DE;
Daniel Biro, Freiburg, DE;
Anne-kristin Volk, Freiburg, DE;
Johannes Seiffe, Freiburg, DE;
Sebastian Mack, Freiburg, DE;
Andreas Wolf, Freiburg, DE;
Ralf Preu, Freiburg, DE;
Ulrich Jager, Freiburg, DE;
Daniel Biro, Freiburg, DE;
Anne-Kristin Volk, Freiburg, DE;
Johannes Seiffe, Freiburg, DE;
Sebastian Mack, Freiburg, DE;
Andreas Wolf, Freiburg, DE;
Ralf Preu, Freiburg, DE;
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V., München, DE;
Albert-Ludwigs-Universität Freiburg, Freiburg, DE;
Abstract
A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer () to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer () and a melting region of the semiconductor substrate lying under the doping layer () in such a way that dopant diffuses from the doping layer () into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region () is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer () and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.