The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jan. 15, 2010
Doug Crafts, Los Gatos, CA (US);
Mehrdad Moslehi, Los Altos, CA (US);
Subramanian Tamilmani, San Jose, CA (US);
Joe Kramer, San Jose, CA (US);
George D. Kamian, Scotts Valley, CA (US);
Somnath Nag, Saratoga, CA (US);
Doug Crafts, Los Gatos, CA (US);
Mehrdad Moslehi, Los Altos, CA (US);
Subramanian Tamilmani, San Jose, CA (US);
Joe Kramer, San Jose, CA (US);
George D. Kamian, Scotts Valley, CA (US);
Somnath Nag, Saratoga, CA (US);
Solexel, Inc., Milpitas, CA (US);
Abstract
It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.