The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Nov. 03, 2011
Jinfeng Kang, Beijing, CN;
Bin Gao, Beijing, CN;
Feifei Zhang, Beijing, CN;
Bing Chen, Beijing, CN;
Lifeng Liu, Beijing, CN;
Xiaoyan Liu, Beijing, CN;
Jinfeng Kang, Beijing, CN;
Bin Gao, Beijing, CN;
Feifei Zhang, Beijing, CN;
Bing Chen, Beijing, CN;
Lifeng Liu, Beijing, CN;
Xiaoyan Liu, Beijing, CN;
Peking University, Beijing, CN;
Abstract
A neuron device includes a bottom electrode, a top electrode, and a layer of metal oxide variable resistance material sandwiched between the bottom electrode and the top electrode, in which the neuron device is switched to a normal state upon application of reset pulse, and is switched to an excitation state upon application of stimulus pulses. The neuron device has a comprehensive response to different amplitude, different width of a stimulus voltage pulse and different number of a sequence of stimulus pulses, and provides functionalities of a weighting section and a computing section. The neuron device has a simple structure, excellent scalability, quick speed, low operation voltage, and is compatible with the conventional silicon-based CMOS fabrication process, and thus suitable for mass production. The neuron device is capable of performing many biological functions and complex logic operations.