The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Jul. 05, 2013
Applicant:

SK Hynix Memory Solutions Inc., San Jose, CA (US);

Inventors:

Frederick K. H. Lee, Mountain View, CA (US);

Jason Bellorado, San Jose, CA (US);

Arunkumar Subramanian, Santa Clara, CA (US);

Lingqi Zeng, Turlock, CA (US);

Xiangyu Tang, San Jose, CA (US);

Ameen Aslam, Santa Clara, CA (US);

Assignee:

SK hynix memory solutions inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/06 (2013.01);
Abstract

A next read threshold is determined by determining a first number of solid state storage cells having a stored voltage which falls into a first voltage range and determining a second number of solid state storage cells having a stored voltage which falls into a second voltage range. A gradient is determine by taking a difference between the first number of solid state storage cells and the second number of solid state storage cells. The next read threshold is determined based at least in part on the gradient.


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