The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Nov. 21, 2011
Ajeet Rohatgi, Marietta, GA (US);
Vijay Yelundur, Canton, GA (US);
Preston Davis, Atlanta, GA (US);
Vinodh Chandrasekaran, Suwanee, GA (US);
Ben Damiani, Atlanta, GA (US);
Ajeet Rohatgi, Marietta, GA (US);
Vijay Yelundur, Canton, GA (US);
Preston Davis, Atlanta, GA (US);
Vinodh Chandrasekaran, Suwanee, GA (US);
Ben Damiani, Atlanta, GA (US);
Suniva, Inc., Norcross, GA (US);
Abstract
Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.