The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jun. 15, 2009
Applicant:
Ralf Lerner, Erfurt, DE;
Inventor:
Ralf Lerner, Erfurt, DE;
Assignee:
X-Fab Semiconductor Foundries AG, Erfurt, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7394 (2013.01); H01L 29/0834 (2013.01); H01L 29/0696 (2013.01); H01L 29/7803 (2013.01); H01L 29/7812 (2013.01);
Abstract
The power transistor configured to be integrated into a trench-isolated thick layer SOI-technology with an active silicon layer with a thickness of about 50 μm. The power transistor may have a lower resistance than the DMOS transistor and a faster switch-off behavior than the IGBT.