The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 06, 2011
Applicants:
Kangwook Park, Seoul, KR;
Donghyun Kim, Suwon-si, KR;
Inventors:
Kangwook Park, Seoul, KR;
Donghyun Kim, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/4983 (2013.01); H01L 29/66659 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4975 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A source region and a drain region are disposed in a substrate. A gate insulating film is disposed on the substrate. A gate electrode is disposed on the gate insulating film. The gate electrode may include a first gate portion adjacent to the source region and a second gate portion adjacent to the drain region. The first and second gate portions have different work functions from each other.