The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Mar. 13, 2012
Shigeru Kawanaka, Yokohama, JP;
Kosuke Tatsumura, Kawasaki, JP;
Naoki Yasuda, Yokohama, JP;
Jun Fujiki, Yokohama, JP;
Atsushi Kawasumi, Kawasaki, JP;
Shigeru Kawanaka, Yokohama, JP;
Kosuke Tatsumura, Kawasaki, JP;
Naoki Yasuda, Yokohama, JP;
Jun Fujiki, Yokohama, JP;
Atsushi Kawasumi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device has a semiconductor substrate, and a semiconductor element having an FET on the semiconductor substrate and comprises a different threshold voltage depending on an OFF state and an ON state. The semiconductor element has an insulating film disposed above a part where a channel of the semiconductor substrate is formed, a gate electrode disposed above the insulating film, and a charge trap film disposed between the insulating film and the gate electrode, and to exchange more electrons with the gate electrode than with the channel.