The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Oct. 25, 2011
Applicants:

Jae-joo Shim, Suwon-si, KR;

Kyoung-hoon Kim, Yongin-si, KR;

Woonkyung Lee, Seongnam-si, KR;

Wonseok Cho, Suwon-si, KR;

Hoosung Cho, Yongin-si, KR;

Jintaek Park, Hwaseong-si, KR;

Jong-yeon Kim, Seoul, KR;

Sung-min Hwang, Seoul, KR;

Inventors:

Jae-Joo Shim, Suwon-si, KR;

Kyoung-Hoon Kim, Yongin-si, KR;

Woonkyung Lee, Seongnam-si, KR;

Wonseok Cho, Suwon-si, KR;

Hoosung Cho, Yongin-si, KR;

Jintaek Park, Hwaseong-si, KR;

Jong-Yeon Kim, Seoul, KR;

Sung-Min Hwang, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.


Find Patent Forward Citations

Loading…