The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Dec. 27, 2012
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventor:

SangHee Yu, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/15 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/66969 (2013.01); H01L 27/153 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/78606 (2013.01);
Abstract

A thin film transistor (TFT), a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the same are provided. An oxide thin film transistor (TFT) includes: a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an active layer formed on the gate insulating layer above the gate electrode; an etch stop layer pattern formed on the active layer; a source alignment element and a drain alignment element formed on the etch stop layer pattern and spaced apart from one another; and a source electrode in contact with the source alignment element and the active layer and a drain electrode in contact with the drain alignment element and the active layer.


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