The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Mar. 10, 2011
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
Hideaki Nakahata, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element arrayincludes an n-type buffer layerdisposed on an InP substrate, an absorption layerhaving a type-II MQW, a contact layerdisposed on the absorption layer, and a p-type region extending to the n-type buffer layerthrough the absorption layer, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junctionis formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.