The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jul. 08, 2011
Bo-young Seo, Suwon-si, KR;
Byung-suo Shim, Yongin-si, KR;
Yong-kyu Lee, Gwacheon-si, KR;
Tea-kwang Yu, Hwaseong-si, KR;
Ji-hoon Park, Seongnam-si, KR;
Bo-Young Seo, Suwon-si, KR;
Byung-Suo Shim, Yongin-si, KR;
Yong-Kyu Lee, Gwacheon-si, KR;
Tea-Kwang Yu, Hwaseong-si, KR;
Ji-Hoon Park, Seongnam-si, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.