The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Mar. 23, 2012
Applicants:
Yasunori Kawamura, Kyoto, JP;
Kyoko Kawakami, Kyoto, JP;
Yoshiki Nakashima, Kyoto, JP;
Inventors:
Assignee:
Nissin Ion Equipment Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 21/265 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2658 (2013.01); H01J 37/08 (2013.01); H01J 37/3171 (2013.01); H01J 2237/006 (2013.01); H01L 21/26506 (2013.01);
Abstract
An ion implantation method includes generating CHions (m is such an integer as 4≦m≦6, and y is such an integer as 1≦y≦2m+2) using an ion generating material expressed by CH(n is such an integer as 4≦n≦6, and x is such an integer as 1≦x≦2n+2), and implanting the ions into a wafer.
Kawamura, Yasunori. (2014). Ion implantation method (U.S. Patent No. 8921240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8921240
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile