The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Feb. 25, 2014
Hironori Araki, Milpitas, CA (US);
Yoshitaka Sasaki, Santa Clara, CA (US);
Hiroyuki Ito, Milpitas, CA (US);
Shigeki Tanemura, Milpitas, CA (US);
Hironori Araki, Milpitas, CA (US);
Yoshitaka Sasaki, Santa Clara, CA (US);
Hiroyuki Ito, Milpitas, CA (US);
Shigeki Tanemura, Milpitas, CA (US);
Abstract
A method of taper-etching a layer to be etched that is made of a dielectric material and has a top surface. The method includes the steps of: forming an etching mask with an opening on the top surface of the layer to be etched; and taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces intersecting at a predetermined angle is formed in the layer to be etched. The step of taper-etching employs an etching gas containing a first gas contributing to the etching of the layer to be etched and a second gas contributing to the deposition of a sidewall protective film, and changes, during the step, the ratio of the flow rate of the second gas to the flow rate of the first gas so that the ratio increases.