The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 17, 2012
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 27/088 (2006.01); H01L 21/28 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/28008 (2013.01); H01L 27/0207 (2013.01);
Abstract
A method for fabricating a semiconductor device includes defining a curved active region by forming a plurality of trenches over a semiconductor substrate, forming an insulating layer to fill the plurality of trenches, and forming a pair of gate lines crossing the curved active region, so that it is possible to prevent leaning of an active region by forming a curved active region.