The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Mar. 15, 2013
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Kee-Jeung Lee, Icheon-si, KR;
Beom-Yong Kim, Icheon-si, KR;
Wan-Gee Kim, Icheon-si, KR;
Woo-Young Park, Icheon-si, KR;
Assignee:
SK Hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); H01L 45/145 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 27/2481 (2013.01);
Abstract
A method for fabricating a variable resistance memory device includes forming an oxygen-deficient first metal oxide layer over a first electrode, forming an oxygen-rich second metal oxide layer over the first metal oxide layer, treating the first and second metal oxide layers with hydrogen-containing plasma, forming an oxygen-rich third metal oxide layer, and forming a second electrode over the third metal oxide layer.
Lee, Kee-Jeung. (2014). Variable resistance memory device and method for fabricating the same (U.S. Patent No. 8921214). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8921214
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile