The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Sep. 27, 2013
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Yutaka Hayashi, Tsukuba, JP;

Yasushi Nagamune, Tsukuba, JP;

Toshitaka Ota, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/732 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66234 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/66272 (2013.01); H01L 29/7322 (2013.01); H01L 29/1004 (2013.01); H01L 29/0692 (2013.01);
Abstract

An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity opposite to the first conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region.


Find Patent Forward Citations

Loading…