The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jan. 16, 2014
SK Hynix Inc., Gyeonggi-do, KR;
Seung Beom Baek, Gyeonggi-do, KR;
Bo Min Park, Gyeonggi-do, KR;
Young Ho Lee, Gyeonggi-do, KR;
Jong Chul Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial layer in the second area using the first insulating layer as a growth prevention layer, and forming a first semiconductor layer on the semiconductor substrate including the sacrificial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile