The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jan. 24, 2007
Applicant:
Michael A. Todd, Phoenix, AZ (US);
Inventor:
Michael A. Todd, Phoenix, AZ (US);
Assignee:
ASM America, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); C30B 29/06 (2006.01); H01L 21/02 (2006.01); C23C 16/32 (2006.01); C30B 25/02 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02532 (2013.01); H01L 21/02381 (2013.01); C23C 16/325 (2013.01); C30B 25/02 (2013.01); C23C 16/24 (2013.01); H01L 21/02529 (2013.01);
Abstract
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.