The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Jan. 25, 2013
Applicants:

Lisa H. Karlin, Chandler, AZ (US);

Hemant D. Desai, Gilbert, AZ (US);

Kemiao Jia, Phoenix, AZ (US);

Inventors:

Lisa H. Karlin, Chandler, AZ (US);

Hemant D. Desai, Gilbert, AZ (US);

Kemiao Jia, Phoenix, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a semiconductor device includes providing a substrate having a first major surface and a second major surface, removing a first portion of the substrate to form a cavity at the first major surface of the substrate, bonding the first major surface of the substrate to a carrier substrate after forming the cavity, and reducing a thickness of the substrate. The method further includes forming a first accelerometer device at the second major surface such that at least a portion of the first accelerometer device is over the cavity and forming a second accelerometer device at the second major surface such that the second accelerometer device is not disposed over the cavity.


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