The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Sep. 14, 2012
Applicants:

Ralf Van Bentum, Moritzburg, DE;

Torsten Klick, Dresden, DE;

Inventors:

Ralf van Bentum, Moritzburg, DE;

Torsten Klick, Dresden, DE;

Assignee:

GLOBALFOUNDRIES, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

Integrated circuits that include SRAM cells having additional read stacks and methods for their fabrication are provided. In accordance with one embodiment a method for fabricating such an integrated circuit includes forming a plurality of SRAM cells in and on a semiconductor substrate, each of the plurality of SRAM cells including a read pull down transistor and a read pass gate transistor. First conductivity-determining impurity ions are implanted to establish a first threshold voltage in each of the read pull down transistors; and second conductivity-determining impurity ions are implanted to establish a second threshold voltage different than the first threshold voltage in each of the read pass gate transistors.


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