The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Apr. 11, 2013
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Kenzo Manabe, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/401 (2013.01); H01L 21/823814 (2013.01); H01L 29/66545 (2013.01); H01L 29/51 (2013.01); H01L 21/823425 (2013.01); H01L 21/823842 (2013.01); H01L 29/78 (2013.01);
Abstract
Improved formation of replacement metal gate transistors is obtained by utilizing a silicon to metal substitution reaction. After removing the dummy gate, a gate dielectric and work function metal are deposited. The work function metal is deposited to a different thickness for the P-channel transistors than for the N-channel transistors. A sacrificial polysilicon gate is then formed, which is caused to undergo substitution with a metal such as aluminum.