The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Nov. 14, 2012
Applicants:

Guangyong Lin, Shrewsbury, MA (US);

Yeshwanth Narendar, Westord, MA (US);

John D. Pietras, Sutton, MA (US);

Qiang Zhao, Bensalem, PA (US);

Robert J. Sliwoski, West Boylston, MA (US);

Caroline Levy, Montpellier, FR;

Samuel S. Marlin, Plan d'Orgon, FR;

Aravind Mohanram, Northborough, MA (US);

Inventors:

Guangyong Lin, Shrewsbury, MA (US);

Yeshwanth Narendar, Westord, MA (US);

John D. Pietras, Sutton, MA (US);

Qiang Zhao, Bensalem, PA (US);

Robert J. Sliwoski, West Boylston, MA (US);

Caroline Levy, Montpellier, FR;

Samuel S. Marlin, Plan d'Orgon, FR;

Aravind Mohanram, Northborough, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/02 (2006.01); H01M 8/02 (2006.01); H01M 4/90 (2006.01); H01M 8/12 (2006.01); H01M 8/10 (2006.01); H01M 8/24 (2006.01);
U.S. Cl.
CPC ...
H01M 8/0282 (2013.01); H01M 8/0228 (2013.01); Y02E 60/50 (2013.01); H01M 8/0217 (2013.01); Y02E 60/525 (2013.01); H01M 8/0236 (2013.01); H01M 2008/1293 (2013.01); Y02E 60/521 (2013.01); H01M 8/1213 (2013.01); H01M 4/9066 (2013.01); H01M 4/905 (2013.01); H01M 4/9033 (2013.01); H01M 8/1004 (2013.01); H01M 8/2425 (2013.01);
Abstract

A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a dthat is greater than about 1 μm and a dthat is greater than about 2 μm.


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