The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jun. 20, 2008
Applicants:
Michael Limmert, Dresden, DE;
Andrea Lux, Dresden, DE;
Horst Hartmann, Dresden, DE;
Inventors:
Assignee:
Novaled AG, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 51/54 (2006.01); H01L 51/46 (2006.01); C07D 487/12 (2006.01); C07F 7/02 (2006.01); C07D 498/04 (2006.01); H01L 51/00 (2006.01); C07D 487/16 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
C07D 487/16 (2013.01); Y02E 10/549 (2013.01); H01L 51/0059 (2013.01); H01L 51/002 (2013.01); H01L 51/0072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5012 (2013.01); H01L 51/0094 (2013.01); H01L 51/5096 (2013.01); H01L 51/5052 (2013.01); H01L 51/0052 (2013.01); Y10S 428/917 (2013.01);
Abstract
Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c: