The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Nov. 14, 2008
Masaki Ueno, Itami, JP;
Eiryo Takasuka, Itami, JP;
Masaki Ueno, Itami, JP;
Eiryo Takasuka, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor () is furnished with a susceptor () and a duct (). The susceptor () has a carrying surface for heating and carrying substrates (). The duct () is for conducting reaction gas (G) to the substrates (). The susceptor () is rotatable with the carrying surface fronting on the duct () interior. The duct () has channels () and (), which merge on the duct end upstream of Point A. The height of the duct () running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point Pto Point P, stays constant from Point Pto Point P, and monotonically diminishes heading downstream from Point P. Point Plies upstream of Point A, while Point Plies on the susceptor ().