The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Nov. 16, 2012
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Hisao Ikeda, Kanagawa, JP;

Tomoya Aoyama, Kanagawa, JP;

Takahiro Ibe, Kanagawa, JP;

Yoshiharu Hirakata, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); C23C 14/28 (2006.01); B05C 11/00 (2006.01); C23C 14/56 (2006.01); C23C 14/26 (2006.01); C23C 14/12 (2006.01); C23C 14/04 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
B05C 11/00 (2013.01); C23C 14/568 (2013.01); C23C 14/26 (2013.01); H01L 51/56 (2013.01); H01L 51/0081 (2013.01); C23C 14/28 (2013.01); C23C 14/12 (2013.01); C23C 14/042 (2013.01);
Abstract

An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.


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