The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Mar. 14, 2013
Applicants:

Lynn Wang, Fremont, CA (US);

Sriram Madhavan, Santa Clara, CA (US);

Luigi Capodieci, Santa Cruz, CA (US);

Inventors:

Lynn Wang, Fremont, CA (US);

Sriram Madhavan, Santa Clara, CA (US);

Luigi Capodieci, Santa Cruz, CA (US);

Assignee:

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5068 (2013.01);
Abstract

Methodology enabling a reduction in a density difference between two complementary exposure masks and/or windows of a layout and an apparatus for performing the method are disclosed. Embodiments include: determining a layer of an IC design having features to be resolved by first and second masks; determining a difference of density by comparing a first density of a first set of the features with a second density of a second set of the features; determining a region on the layer of a first feature to be resolved by the first mask; and inserting, within the region, a polygon to be resolved by the second mask based on the difference of density.


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