The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Nov. 20, 2012
Applicant:

Donghun Kwak, Suwon-Si, KR;

Inventor:

Donghun Kwak, Suwon-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/06 (2006.01); H01L 27/115 (2006.01); G11C 16/26 (2006.01); G11C 16/06 (2006.01); G11C 16/20 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/06 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); G11C 16/0441 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/20 (2013.01); H01L 27/1158 (2013.01);
Abstract

Disclosed is a method reading memory device information from a nonvolatile memory device having a three-dimensional (3D) memory cell array including an original plane storing data associated with the information in a first group of memory cells and a replica plane storing the data in replica in a second group of memory cells. The method applies a selection read voltage to a selected word line connected to first and second groups of memory cells while applying a non-selection read voltage to other word lines, and simultaneously reading first data from the first group of memory cells and second data from the second group of memory cells.


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