The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Oct. 25, 2012
Headway Technologies, Inc., Milpitas, CA (US);
Guenole Jan, San Jose, CA (US);
PoKang Wang, Los Altos, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A structure and method is described for an adaptive reference used in reading magnetic tunneling memory cells. A collection of magnetic tunneling memory cells are used to form a reference circuit and are coupled in parallel between circuit ground and a reference input to a sense amplifier. Each of the magnetic memory cells used to form the reference circuit are programmed to a magnetic parallel state or a magnetic anti-parallel state, wherein each different state produces a different resistance. By varying the number of parallel states in comparison to the anti-parallel states, where each of the two states produce a different resistance, the value of the reference circuit resistance can be adjusted to adapt to the resistance characteristics of a magnetic memory data cell to produce a more reliable read of the data programmed into the magnetic memory data cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile