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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8916960 B1

PDFFull Text
Expired
Date of Patent:
Dec. 23, 2014

Filed:

Jul. 03, 2013

Semiconductor unit

Applicant:

Kabushiki Kaisha Toyota Jidoshokki, Kariya-shi, Aichi-ken, JP;

Inventors:

Shinsuke Nishi, Aichi-ken, JP;

Shogo Mori, Aichi-ken, JP;

Yuri Otobe, Aichi-ken, JP;

Naoki Kato, Aichi-ken, JP;

Assignee:

Kabushiki Kaisha Toyota Jidoshokki, Aichi, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Phuc Dang

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/34 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 23/3735 (2013.01); H01L 23/473 (2013.01); H01L 24/34 (2013.01); H01L 2224/32245 (2013.01);
Abstract

A semiconductor unit includes a base having a surface where a first insulation layer is disposed, a second insulation layer spaced apart from the first insulation layer to form a region therebetween and disposed parallel to the surface of the base where the first insulation layer is disposed, a single conductive layer disposed across the first insulation layer and the second insulation layer, and a semiconductor device bonded to the conductive layer.

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Nishi, Shinsuke. (2014). Semiconductor unit (U.S. Patent No. 8916960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8916960

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