The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Nov. 01, 2011
Yasuhiro Takeda, Ora-gun, JP;
Seiji Otake, Kumagaya, JP;
Yasuhiro Takeda, Ora-gun, JP;
Seiji Otake, Kumagaya, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
An N type layer made of an N type epitaxial layer in which an N+ type drain layer etc are formed is surrounded by a P type drain isolation layer extending from the front surface of the N type epitaxial layer to an N+ type buried layer. A P type collector layer is formed in an N type layer made of the N type epitaxial layer surrounded by the P type drain isolation layer and a P type element isolation layer, extending from the front surface to the inside of the N type layer. A parasitic bipolar transistor that uses the first conductive type drain isolation layer as the emitter, the second conductive type N type layer as the base, and the collector layer as the collector is thus formed so as to flow a surge current into a ground line.