The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Sep. 02, 2011
Ryuji Ohba, Kawasaki, JP;
Ryuji Ohba, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, in a nonvolatile semiconductor memory in which a charge store layer is formed on a tunnel insulating film formed on a channel region of a semiconductor substrate, a first nanoparticle layer containing first conductive nanoparticles is formed on the channel side, and a second nanoparticle layer containing a plurality of second conductive nanoparticles having an average particle size larger than the first conductive nanoparticles is formed on the charge store layer side. An average energy value ΔErequired for charging one electron in the first conductive nanoparticle is smaller than an average energy value ΔE required for charging one electron in the second conductive nanoparticle, and a difference between ΔEand ΔE is larger than a heat fluctuation energy (kT).